Gallium Nitride (GaN) power devices have shown better switching frequencies, higher power densities, and higher power conversion efficiency with more straightforward topologies when compared to traditional silicon (Si) devices. In this PowerUP episdoe with Cem Basceri, CEO and President of Qromis, we discuss a novel strategy for expanding GaN's production capacity in a non-silicon fabrication facility (Fab) to improve its application space, enable monolithic integration, and boost wafer diameters.